High-resolution electron microscopy of wurtzite-type CdSe epilayers which had been grown onto (111) GaAs revealed that the interfacial misfit dislocations were of perfect 60º type, with Burgers vectors which were parallel to the interface. Therefore, glide was limited to the (00•1) interface plane, and extension of dislocations into the epilayer was suppressed. The use of single-beam bright-field imaging showed that the 7% mismatched epilayer was free of any dislocation network within its volume.

M.Grün, C.Klingshirn, A.Rosenauer, J.Zweck, W.Gebhardt: Applied Physics Letters, 1993, 63[21], 2947-8