Transmission electron microscopic investigations were made of highly mismatched wurtzite-type epilayers with misfit dislocations that were confined to a narrow region which was close to the interface. The epilayers were grown, by using hot-wall epitaxy, onto GaAs (¯1¯1¯1)B. High-resolution electron microscopy revealed the presence of interfacial misfit dislocations with Burgers vectors that were parallel to the (00•1) interface plane. Glide was therefore limited to (00•1) planes, and the extension of misfit dislocations into the epilayer was suppressed.

A.Rosenauer, H.Stanzl, K.Wolf, S.Bauer, M.Kastner, M.Grün, W.Gebhardt: Materials Science Forum, 1994, 143-147, 567-72