The interface microstructure and strain relaxation of atomic-layer epitaxially grown CdSe on ZnSe/GaAs(001) was investigated by using electron microscopy. It was found that the CdSe epilayer was characterized by the presence of fluctuating misorientations along the interface, irregularly distributed stacking faults, and an array of misfit dislocations that comprised 60º, Lomer and partial types. It was also noted that the fluctuating misorientation was related to the proportions of the various 60º misfit dislocations and stacking faults. These caused the local strain difference. Analysis of the misfit dislocations was facilitated by using a digital image processing method which permitted a clear image to be obtained of a Lomer misfit dislocation which was formed by the interaction of two 60º misfit dislocations.

X.H.Wu, Z.L.Peng, S.X.Yuan, F.H.Li: Journal of Applied Physics, 1995, 77[8], 3818-22