Separate investigations were made of  and  dislocations in p-type material by using deep-level transient spectroscopy. Two lines, whose amplitudes increased with increasing dislocation density, were found. The defect concentration was found to be higher in the case of  dislocations. One line, at Ev + 0.44eV, was Gaussian broadened while the other, at Ev + 0.35eV, exhibited unusual capture characteristics.

I.A.Hümmelgen, W.Schröter: Applied Physics Letters, 1993, 62[21], 2703-4