Multiple quantum-well diode lasers and light-emitting diodes were grown onto p-type or n-type GaAs substrates, with or without the incorporation of S. In all of the structures, efforts were made to minimize the number of dislocations by lattice-matching the active II-VI region to the GaAs substrate. Some devices then had dislocation densities which were below 105/cm2.

R.L.Gunshor, A.V.Nurmikko, N.Otsuka: Thin Solid Films, 1993, 231[1-2], 190-6