The properties of (Cd,Zn)Se multi-quantum wells that had been grown, by means of molecular beam epitaxy, onto ZnSe monocrystals of high structural quality were studied. On the basis of high-resolution X-ray diffraction, transmission electron microscopic, and electro-optical measurements, it was shown that they were all superior to similar structures that had been grown onto (001) GaAs substrates using a 5-thick Ga0.96In0.04As buffer that was almost lattice-matched to ZnSe. Cross sectional transmission electron microscopic studies indicated that the III-V/II-VI interface was the source of the dislocations which were observed.

H.Wenisch, K.Schüll, T.Behr, D.Hommel, G.Landwehr, D.Siche, P.Rudolph, H.Hartmann: Journal of Crystal Growth, 1996, 159, 26-31