An investigation was made of the microstructures of Cd0.96Zn0.04Te samples which had been plastically deformed in uniaxial compression at a constant strain rate, at homologous temperatures of between 0.6 and 0.85. Scanning electron microscopy in the cathodoluminescence mode was used to study dislocation arrangements, and transmission electron microscopy was used to measure dislocation dissociation widths. It was found that iso-electronic doping strongly increased the yield stress and the hardening rate. A cell structure appeared at higher stresses and strains. No increase in dissociation width was observed. On the basis of macroscopic and microscopic studies, a better understanding of the hindering (by doping) of dislocation multiplication during crystal growth was obtained.

D.Imhoff, J.P.Rivière, A.Zozime, J.Castaing: Journal of Crystal Growth, 1993, 130[3,4], 627-35