A detailed study was made of the p-type doping of Te-based compounds during molecular beam epitaxy, using N atoms which were produced by a direct-current glow plasma source. The samples were characterized by using capacitance-voltage, Hall effect, low-temperature reflectivity and luminescence, double-crystal X-ray diffraction, nuclear reaction analysis and secondary ion mass spectroscopy. It was found that doping introduced shallow hydrogenic acceptors, NTe. The doping level decreased considerably as the Zn content decreased.

T.Baron, K.Saminadayar, N.Magnea: Journal of Applied Physics, 1998, 83[3], 1354-70