Photoluminescence features which lay more than 0.15eV below the band edge of the ZnxCd1-xTe crystals (where x was between 0 and 0.09) were studied at cryogenic temperatures. A defect band which lay 0.13 to 0.20eV below the band-gap energy, and a peak at 1.1eV, were observed. In annealed samples, it was observed that the 1.1eV feature, which was attributed to Te vacancies, increased with fast cooling.

C.B.Davis, D.D.Allred, A.Reyes-Mena, J.González-Hernández, O.González, B.C.Hess, W.P.Allred: Physical Review B, 1993, 47[20], 13363-9