Strained-layer superlattices were prepared by using molecular beam epitaxial growth, and their interaction with a CdTe buffer layer was studied by using transmission electron microscopy. It was found that there was an order of magnitude reduction in the threading dislocation density of the superlattice, as compared with the buffer layer. This reduction occurred because the mismatch-induced strain bent the threading dislocations into the superlattice/buffer interface.

J.Petruzzello, D.Olego, X.Chu, J.P.Faurie: Journal of Applied Physics, 1989, 66[7], 2980-3)