Epilayers of undoped, Si-doped and Mg-doped material were grown by using metal-organic chemical vapour deposition. As compared with undoped samples, Si and Mg doping increased the threading dislocation density in the films by one, and two, orders respectively. The Mg doping caused an additional biaxial compressive stress of 0.095GPa, as compared with both undoped and Si-doped layers. This was attributed to the incorporation of large numbers of Mg atoms.

Comparative Analysis of Characteristics of Si, Mg and Undoped GaN K.S.Kim, C.S.Oh, W.H.Lee, K.J.Lee, G.M.Yang, C.H.Hong, E.K.Suh, K.Y.Lim, H.J.Lee, D.J.Byun: Journal of Crystal Growth, 2000, 210[4], 505-10