A study was made of II-VI/(001)GaAs heterostructures which exhibited a strong micro-twin anisotropy under conditions of tensile and compressive strain. Epitaxial ZnS/GaAs exhibited micro-twins only in the [1¯10] projection, when far from the interface. This indicated that a growth model was most appropriate for the description of micro-twin propagation in these cases. It was noted that it was important to take account of interface integrity when attempting to distinguish between growth-induced and deformation-induced micro-twinning processes.

P.D.Brown, Y.Y.Loginov, W.M.Stobbs, C.J.Humphreys: Philosophical Magazine A, 1995, 72[1], 39-57