Single quantum-well structures were studied in various II-VI semiconductor materials that were based upon ZnSe. In particular, structures were investigated in which the intermixing of column-II elements could be induced as well as permitting interdiffusion within the column-VI sub-lattice. The diffusion was induced by rapid thermal annealing for 60s at various temperatures. The resultant blue shift of the characteristic emission spectrum was analyzed by means of photoluminescence spectroscopy. It was observed that there was a significant difference in the diffusion behaviors of the 2 groups of material. The ZnSe-based quantum wells exhibited markedly small diffusion lengths.

D.Tönnies, G.Bacher, A.Forchel, A.Waag, T.Litz, D.Hommel, C.Becker, G.Landwehr, M.Heuken, M.Scholl: Journal of Crystal Growth, 1994, 138, 362-6