The properties of dislocations in the material were reviewed. Theoretical investigations favoured a reconstruction which eliminated, or reduced, the electrical activity. There was a consequent increase in the barrier to dislocation motion. Because there were problems in reconciling these results with experimental data, it was suggested that the effect of impurities or point defects could not be overlooked.

Do We Really Understand Dislocations in Semiconductors R.Jones: Materials Science and Engineering B, 2000, 71[1-3], 24-9