Interface stability, and its relationship to the misfit-induced film degradation which occurred above a critical thickness of the ZnSe epilayer, were studied by using Rutherford back-scattering spectroscopy. The minimum back-scattering yield along [110]-type channelling directions increased from 6 to 12% when the ZnSe film thickness was increased from 180 to 360nm. This may have indicated an increase in the density of misfit dislocations at thicknesses above the critical value. Diffusion effects at ZnSe/GaAs interfaces were observed in thicker ZnSe films after thermal annealing (600C, 5h). This was revealed by variations in the Rutherford back-scattering spectroscopy random spectra. A lattice-matched ZnSSe/GaAs system exhibited a markedly different behavior. That is, the interface was extremely stable even after thermal annealing. This indicated the importance of lattice matching in the thermal stability of a hetero-interface.

K.Ohmi, I.Suemune, T.Kanda, Y.Kan, M.Yamanishi, F.Nishiyama, H.Hasai: Journal of Crystal Growth, 1988, 86[1-4], 467-70