By using He-Cd laser irradiation during molecular beam epitaxial growth at 250C, the density of hillocks on the epilayers was reduced from 106 to 104/cm2. The critical thickness was increased, and the intensities of the free-exciton emissions were markedly increased. The results were explained in terms of the migration of surface adatoms being enhanced by the irradiation. The use of chopped radiation revealed that the effects persisted for at least 5ms after the light was blocked, and suggested that the change in the charge state of the surface (which caused the changed behavior of the adatoms during irradiation) persisted for a long time after removal of the light.

S.Ichikawa, N.Matsumura, K.Yamawaki, K.Senga, J.Saraie: Journal of Crystal Growth, 1994, 138[1-4], 14-8