Electromigration was observed to occur in some Li-doped epitaxial layers. It was found that there was a correlation between the degree of electromigration and the degree of compensation of the layers. This fact was consistent with the assumed electromigration of Li interstitials. Moreover, uncompensated layers exhibited no electromigration and thus supported the suggestion that Li atoms on Zn lattice sites (acceptors) were stable at room temperature. It was concluded that electromigration was beneficial to devices with compensated p-type layers.

M.A.Haase, J.M.De Puydt, H.Cheng, J.E.Potts: Applied Physics Letters, 1991, 58[11], 1173-4