Far-infrared magneto-optical absorption and photoluminescence were measured in ZnSe epitaxial layers which had been grown onto GaAs substrates by using the metalorganic vapor phase epitaxial method. The 1s  2p+ Zeeman absorption peaks of donor bound electrons were observed at 4.6 and 7.0T for far-infrared radiation with wavelengths of 57.0 and 53.7, respectively. The energy levels for donor states were calculated by using H-like wave-functions with 1 variational parameter. From the line-width of the absorption peak, the dislocation density was estimated to be of the order of 107/cm2.

R.Komeda, H.Nakata, T.Ohyama: Materials Science Forum, 1993, 117-118, 477-82