The atomic and electronic structures of misfit dislocations at semiconductor heterostructures were investigated by using tight-binding electronic theory. Particular attention was paid to the ½<110>(001) misfit dislocations of the ZnSe/GaAs(001) system. It was shown that the misfit dislocation at the heterojunction produced 2 deep levels which were located at 1.14 and 2.17eV above the top of the valence band. The degradation of such heterostructures was considered in terms of the introduction of misfit dislocations.

K.Masuda-Jindo: Superlattices and Microstructures, 1994, 16[4], 359-62