The atomic and electronic structures of misfit dislocations at semiconductor heterostructures were investigated by using tight-binding electronic theory. Particular attention was paid to ½<110>(001) misfit dislocations in the ZnSe/GaAs(001) system. It was shown that a misfit dislocation at a ZnSe/GaAs(001) heterojunction produced deep levels which were located at 1.14 and 2.27eV above the top of the valence band.

K.Masuda-Jindo: Superlattices and Microstructures, 1994, 16[4], 359-63