A previously reported general technique for the measurement of threading dislocation densities in epitaxial semiconductors, by means of high-resolution X-ray diffraction, was here extended to the case of a Bartels 5-crystal diffractometer by making use of the characteristics of the latter instrument. The usefulness of the method was demonstrated by applying the technique to epitaxial ZnSe which had been grown onto (001) GaAs by means of photo-assisted metalorganic vapor-phase epitaxy. It was shown that, in this case, the threading dislocation density of the epitaxial layer could be quantitatively determined. Evidence was also presented for the introduction of dislocations into the underlying GaAs substrate.

P.D.Healey, K.Bao, M.Gokhale, J.E.Ayers, F.C.Jain: Acta Crystallographica, 1995, A51[4], 498-503