Raman scattering measurements were made of ZnSe epilayers, of various thickness, which had been grown onto (001) GaAs substrates. The thickness dependence of the Raman shift and the half-width of the LO(ZnSe) mode were considered. The dependence of the LO(ZnSe)/LO(GaAs) mode ratio upon the orientation of the sample and upon the electric field vector of the light was also studied. It was shown that Raman scattering spectroscopy was a powerful method for investigating the strain and misfit dislocation profiles of ZnSe/GaAs heterostructures.

W.Bala, M.Drozdowski, M.Kozielski: Materials Science Forum, 1994, 143-147, 549-54