An investigation was made of the effect of manipulating the initial growth of ZnSe on GaAs(100). The growth mode was changed from a 3-dimensional one to a 2-dimensional one by controlling the impingement sequence of source beam fluxes at Ga- or As-stabilized GaAs(100) surfaces. Electron microscopy, photoluminescence, and Raman spectroscopic studies revealed that an increasingly 2-dimensional growth mode greatly improved crystal quality, and led to a marked reduction in the threading dislocation density. The growth of a 1 ZnSe layer, under 2-dimensional initial growth conditions, resulted in a very low (order of 106/cm2) threading dislocation density at the epilayer surface.

S.Guha, H.Munekata, L.L.Chang, W.C.Tang: Journal of Crystal Growth, 1993, 127[1-4], 308-13