An investigation was made of the effect of the initial growth mode upon dislocation configurations in epitaxial ZnSe/GaAs(100). It was found that a 3-dimensional initial growth mode strongly degraded the crystal quality, and led to a high density of threading dislocations and short segments of misfit dislocation. On the other hand a 2-dimensional growth mode, which was achieved by the Zn exposure of GaAs surfaces, resulted in few threading dislocations and long misfit dislocations. These differences were explained by postulating that new dislocation generation sites were created by island coalescence.

S.Guha, H.Munekata, L.L.Chang: Journal of Applied Physics, 1993, 73[5], 2294-300