The existence of Zn-As and Ga-Se interfacial layers was indicated by transmission electron microscopic studies of Zn-treated and Se-treated or reacted ZnSe/GaAs interfaces, respectively. High densities of As precipitates and Shockley partials were introduced into Zn-treated films on a c(4 x 4) As-rich GaAs surface. In addition, high densities of vacancies and Shockley partials were found in samples with a Se-reacted ZnSe/GaAs interface. The formation of Shockley partials was suggested to arise from stacking errors that were induced by a disordering of Zn or Ga interstitials on the GaAs surface.

L.H.Kuo, K.Kimura, T.Yasuda, S.Miwa, C.G.Jin, K.Tanaka, T.Yao: Applied Physics Letters, 1996, 68[17], 2413-5