Various molecular beam epitaxial growth techniques for Cl doping were used in order to try to obtain n-type ZnSe layers of high crystalline quality. Layers with high Cl dopant concentrations, that were grown using conventional uniform doping methods, contained a high density of stacking faults and dislocations. The initial undoped ZnSe layer played an important role in suppressing stacking faults in Cl-doped layers. Electrochemical C-V and secondary ion mass spectrometry measurements showed that the electrical efficiency of the Cl atoms in the ZnSe lattice was improved by -doping.

J.S.Kim, G.H.Kim, S.H.Suh, S.J.Chung: Journal of Crystal Growth, 1996, 159, 354-8