Very low defect-density ZnSe epilayers were grown onto GaAs substrates by means of metalorganic chemical vapor deposition. It was found that the best results were obtained by using undoped GaAs. Full-width at half-maximum values of as little as 90arcsec were found for the ZnSe. Transmission electron microscopic results showed that ZnSe epilayers which had been grown onto undoped GaAs had a very low stacking fault density, and a large spacing between misfit dislocations. The stacking-fault density was less than 105/cm2. This was more than 3 orders of magnitude lower than that in samples which had been grown by using conventional molecular beam epitaxy. The spacing between misfit dislocations ranged from 5 to 10. These values were 10 to 20 times higher than normal.

J.C.Chen, Y.Bing, L.H.Kuo, L.Salamanca-Riba, F.Semendy, N.Bambha: Materials Chemistry and Physics, 1996, 45[1], 88-91