It was recalled that epitaxial films on GaAs(011) contained high (1010/cm2) densities of stacking faults. These exhibited a marked asymmetry in density parallel to orthogonal [110] and [1¯10] directions. The addition of dopants such as Al and In, during film growth, affected the defect distribution and resulted in a systematic reduction in the stacking fault density, with increasing dopant concentration, and in the formation of misfit dislocations. It was suggested that the observed stacking fault asymmetry arose from variations, in the partial dislocation mobilities, due to the addition of dopants.

J.L.Batstone, J.W.Steeds, P.J.Wright: Philosophical Magazine A, 1992, 66[4], 609-20