The structure of stacking faults that formed in pairs in a ZnSe epitaxial layer which had been grown, by GaAs-source molecular beam epitaxy, onto a GaAs(001) buffer layer was determined by using transmission electron microscopy. Extrinsic-type stacking faults formed on (111) and (¯1¯11) planes, with the same polarity, as demonstrated by convergent-beam electron diffraction data. The 2 stacking faults met at a point which was a few atomic layers away from the interface between ZnSe and GaAs. Partial dislocations at the edge of the stacking faults were found to be of Shockley type, with a Burgers vector of (1/6)<211>.

J.Tanimura, O.Wada, T.Ogama, Y.Endoh, M.Imaizumi: Journal of Applied Physics, 1995, 77[12], 6223-7