Deep-level defects in Li+-implanted epilayers which had been grown, using vapor-phase epitaxial methods, onto a GaAs substrate were examined by means of deep-level transient spectroscopy. Electron traps (Ec-0.3eV, Ec-0.33eV, Ec-0.55eV, Ec-1.02eV) and a hole trap (Ev+0.23eV) were detected. It was concluded that interdiffusion across the ZnSe/GaAs interface had a marked effect upon the formation of native defects in such materials under the present conditions.

Y.H.Wang, S.S.Li: Journal of Applied Physics, 1990, 68[5], 2535-7