The formation of ohmic contacts to n-type material which had been grown onto GaAs by using metalorganic vapor-phase epitaxy was studied by using current-voltage and photoluminescence techniques. It was found that annealing at temperatures as low as 300C led to the formation of deep complexes with photoluminescence emissions at 2.25 to 2.35eV, and 1.97eV.

M.Heuken, J.Söllner, F.E.G.Guimaraes, K.Marquardt, K.Heime: Applied Physics Letters, 1992, 60[14], 1694-6