Scanning tunnelling microscopic images of native antisite defects at relaxed (110) surfaces were theoretically predicted. It was found that the images for a particular sample depended upon the sign of the voltage bias and upon the voltage sweep of the sample relative to the microscopic tip. It also depended upon whether that sweep caused a deep level to participate actively in tunnelling. Under certain conditions, the images gave the appearance of 2 defects at incorrect sites.

W.M.Hu, J.D.Dow: Journal of Vacuum Science and Technology B, 1989, 7[4], 907-9