Deep levels in Ga-doped films which had been grown by means of molecular beam epitaxy were investigated by using deep-level transient spectroscopy. It was found that Au/Ga-doped Schottky diodes contained 2 well-defined electron traps with activation energies of 0.26eV (trap A) or 0.40 to 0.56eV (trap B). The activation energy of trap B depended upon the free-carrier concentration. The trap concentration, normalized with respect to the free-carrier concentration, increased as the Se/Zn ratio was increased. On the basis of these observations, it was concluded that traps A and B could be attributed to a complex of either the Zn vacancy with Ga or to interstitial Se and Ga.

T.Miyajima, K.Akimoto, Y.Mori: Journal of Applied Physics, 1990, 67[3], 1389-92