An experimental investigation was made of the effects of isolated As atoms at substitutional Se sites. The method was to use neutron transmutation doping, and the long half-life of 75Se, in order to introduce AsSe dopants. In one method, bulk material was irradiated and then annealed before significant decay of 75Se could occur. In another method, a post-irradiation homo-epitaxial crystal-growth technique was used in which the 75As decay product was incorporated into an epitaxial layer of ZnSe after the epitaxial layer had been grown. Because the nuclear recoils that were associated with the decay of 75Se to 75As were too small to be able to displace As atoms from Se sites, As doping at Se sites was assured.

E.D.Wheeler, J.L.Boone, J.W.Farmer, H.R.Chandrasekhar: Physical Review B, 1996, 53[23], 15617-21