The H local vibrational modes in As-doped material that had been grown by means of metalorganic chemical vapor deposition were studied by means of infra-red absorption spectroscopy. When H was used as a carrier gas, an absorption peak was found at 2165.6/cm. This was attributed to a bond-stretching mode of a H atom that was attached to an As acceptor in a bond-centered orientation. When D replaced the H carrier gas, an additional peak was found at 1557.1/cm; with an intensity which was one third of that of the H peak. The H/D isotopic frequency ratio was equal to 1.3908; a value which was similar those which were noted for many H/D-related complexes. A larger area of the H peak indicated that most of the H came from decomposition reactions that involved metalorganic molecules. The temperature-dependent shift in the mode of the hydrogenated As-doped material was proportional to the lattice thermal energy. This was attributed to an anharmonic coupling between the local vibrational modes and the lattice phonons.

M.D.McCluskey, E.E.Haller, F.X.Zach, E.D.Bourret-Courchesne: Applied Physics Letters, 1996, 68[24], 3476-8