It was recalled that the net acceptor concentration in p-type material which was doped with increasing amounts of N was believed to be limited by the formation of a compensating donor species at 0.045 to 0.055eV below the conduction band. Here, a study was made of spin-flop Raman scattering from these and other donor-like centers in specimens which were produced by N radical doping during molecular beam epitaxial growth. The results showed that the main compensating donor center which was introduced by N doping had a g-value of 1.36; in agreement with previous interpretations of optically detected magnetic resonance spectra from N-doped layers.

P.J.Boyce, J.J.Davies, D.Wolverson, K.Ohkawa, T.Mitsuyu: Applied Physics Letters, 1994, 65[16], 2063-5