Molecular beam epitaxially grown material, doped with 15N to as much as 1.5 x 1020/cm3, was characterized by using ion beam analytical techniques. The resonant nuclear reaction, 15N(p,)12C, was used to detect 15N, while particle-induced X-ray emission methods were used to obtain some insight into the effect of N doping upon the lattice location of Zn and Se atoms. It was demonstrated that the incorporated N atoms were located at substitutional sites, and that both Zn and Se atoms were located at substitutional sites. The results suggested that carrier compensation in heavily N-doped ZnSe was not caused by donors such as Ni or NSe-Zni, but by complex defects which included donor-type complexes such as NSe-Zn-VSe and/or NZn-NSe. It was also suggested that a cluster of NSe, such as (NSe)n-Zn, might play a role as a deep acceptor.

T.Yao, T.Matsumoto, S.Sasaki, C.K.Chung, Z.Zhu, F.Nishiyama: Journal of Crystal Growth, 1994, 138[1-4], 290-4