It was recalled that recent progress in the p-type doping of this material had been achieved by using molecular beam epitaxial growth techniques, with N free-radicals as a source for acceptor doping. Attempts to use the organometallic vapor-phase epitaxial growth technique instead had not been so successful, and it had been suggested that a major impediment was the passivation of N acceptors by H. Here, the first spectroscopic evidence for the presence of N-H complexes in organometallic vapor-phase epitaxially grown ZnSe was presented. The ZnSe layers were grown, by using photo-assisted organometallic vapor-phase epitaxial methods, onto (100) semi-insulating substrates. The growth temperature was 350C and the layers were 2.3 to 3 thick. Capacitance-voltage measurements showed that the concentration of electrically active acceptors was less than 1015/cm3; although the total concentration of N atoms exceeded 1018/cm3.

J.A.Wolk, J.W.Ager, K.J.Duxstad, W.Walukiewicz, E.E.Haller, N.R.Taskar, D.R.Dorman, D.J.Olega: Journal of Crystal Growth, 1994, 138, 1071-2