Films which had been grown by means of molecular beam epitaxy were studied by using positron annihilation methods. It was found that doping with Ga atoms produced vacancy-type defects such as Zn vacancies, and that heavy doping with O atoms produced interstitial-type defects. It was suggested that these defects were one of the causes of active carrier saturation in doped ZnSe films.

T.Miyajima, H.Okuyama, K.Akimoto, Y.Mori, L.Wei, S.Tanigawa: Journal of Crystal Growth, 1992, 117, 694-7