Optically detected magnetic resonance methods were used to investigate deep-level recombination processes in p-type material which had been grown by means of molecular beam epitaxy, and doped with N. In addition to the well-known shallow donor resonance at g = 1.11, an anisotropic deep-donor resonance was observed, with g = 1.38, and a deep-acceptor resonance was detected at g = 2. These results were consistent with a previously proposed pair recombination processes, in which the compensating deep donor was attributed to the VSe-Zn-NSe complex.

B.N.Murdin, B.C.Cavenett, C.R.Pidgeon, J.Simpson, I.Hauksson, K.A.Prior: Applied Physics Letters, 1993, 63[17], 2411-3