Compensating centers in N-doped material were investigated. An ion-beam analysis was made of N-implanted and N2-implanted samples in order to obtain some insight into the lattice location of N2. It was concluded that N2 molecules were situated at random sites in the lattice. It was suggested that a few types of compensating center were responsible for the compensation process.

T.Yao, Z.Zhu, Y.H.Wu, C.D.Song, F.Nishiyama, K.Kimura, H.Kajiyama, S.Miwa, T.Yasuda: Journal of Crystal Growth, 1996, 159, 214-20