Cathodoluminescence measurements were carried out on heterostructures which had been grown by metalorganic vapor-phase epitaxy, following various pre-growth treatments. The effect of structural defects upon the luminescence properties of ZnSe epilayers were studied above and below the critical thickness for strain relaxation. The cathodoluminescence results, combined with scanning transmission electron microscopy, demonstrated that there was a correlation between structural defects and deep-level emissions at about 580nm.

Q.Liu, H.Lakner, C.Mendorf, W.Taudt, M.Heuken, K.Heime, E.Kubalek: Journal of Physics D, 1998, 31[19], 2421-5