Point defects were studied in films, which had been grown by means of molecular beam epitaxy, by using the positron annihilation method. It was found that doping with Ga atoms introduced vacancy-type defects such as Zn vacancies, and that heavy doping with O atoms introduced interstitial O clusters. These defects were suggested to be a cause of active carrier saturation in doped ZnSe films.

T.Miyajima, L.Wei, S.Tanigawa, H.Okuyama, K.Akimoto Y.Mori: Materials Science Forum, 1992, 105-110, 1423-6