It was noted that the Zn/Se flux ratio which was used during the early stages of the molecular beam epitaxial growth of pseudomorphic ZnSe/GaAs(001) or lattice-matched ZnSe/Ga0.96In0.04As(001) heterostructures controlled the density of native stacking faults. It was noted, in particular, that the density of Shockley stacking fault pairs decreased by 3 to 4 orders of magnitude, and that of Frank stacking faults decreased by an order of magnitude in going from Zn-rich to Se-rich interfaces. Because similar trends were observed in both the strained pseudomorphic heterostructure as well as in the lattice-matched heterostructures, it was concluded that strain did not play a large role in determining the stacking fault density.

S.Heun, J.J.Paggel, L.Sorba, S.Rubini, A.Franciosi, J.M.Bonard, J.D.Ganière: Applied Physics Letters, 1997, 70[2], 237-9