Thin films were grown, by means of molecular beam epitaxy, onto the Zn-exposed (2 x 4) As-stabilized surfaces of GaAs epilayers under various beam flux ratios. A density of faulted defects which was of the order of 104/cm2 was generated in samples which were grown under conditions that involved a mixture of both (2 x 1) and weak c(2 x 2) reconstructions during the initial stages of growth. An asymmetrical distribution of the densities of extrinsic cation-terminated and anion-terminated Shockley-type stacking faults was generated in samples that had been grown with Zn-rich and Se-rich surface stoichiometries, respectively.

L.H.Kuo, K.Kimura, S.Miwa, T.Yasuda, T.Yao: Applied Physics Letters, 1996, 69[10], 1408-10