Films which were grown onto (100) Ge substrates by using molecular beam epitaxy contained a high density of defects such as twins and, in some cases, low-angle boundaries. In situ transmission electron microscope annealing and bulk vacuum annealing studies were made of as-grown ZnSe/(100)Ge specimens. After both types of annealing, the twins were very stable during heating-cooling cycles.

S.B.Sant, R.W.Smith, G.C.Weatherly: Philosophical Magazine Letters, 1990, 61[5], 273-80