The interaction between group-V acceptors and the substitutional donor, In, was studied by means of perturbed  angular correlation spectroscopy. When the material was doped with N, P, As or Sb, by implantation or diffusion, close donor-acceptor pairs were detected. Properties of the acceptors, such as the lattice site, the charge state, the stability and the diffusion mechanism, were deduced from the structure and stability of the pairs which formed and from the temperature dependence of pair formation.

H.Wolf, A.Burchard, M.Deicher, T.Filz, A.Jost, S.Lauer, R.Magerle, V.Ostheimer, W.Pfeiffer, T.Wichert: Materials Science Forum, 1995, 196-201, 309-14