A review was presented of native defect properties in II-VI compound semiconductors. On the basis of electron paramagnetic resonance, optically detected magnetic resonance, photoluminescence and positron annihilation spectroscopic data, intrinsic defects and their complexes were identified. A comparison was made of their magnetic resonance properties and energy-level positions in the various compounds in order to reveal similar chemical trends for all of the major intrinsic defects. Account had to be taken of the passivation of electrically active defects by H, and of possible contamination by O.

B.K.Meyer, W.Stadler: Journal of Crystal Growth, 1996, 161, 119-27