Multi-layers of II-VI semiconductors, which contained a quantum well, were implanted with Zn+ or Cd+ ions using various fluences and temperatures and were analyzed by means of Rutherford back-scattering spectroscopy and channelling techniques. The direct back-scattering of channelled ions (He+) showed that the density of crystalline defects in the well increased with fluence and implantation temperature, and confirmed that layer intermixing took place. A model was used to link the accumulation of defects to vacancy trapping in the region where the vacancy-free enthalpy was minimized. In the present cases, this trapping corresponded to a decrease in the elastic energy of the strained layer.

K.Khalal, A.C.Chami, E.Ligeon, J.Fontenille, A.Hamoudi, G.Bérard, J.Cibert: Journal of Applied Physics, 1995, 78[6], 3706-13