The interaction of Hg vacancies with In dopant atoms in Hg0.79Cd0.21Te was studied by using perturbed γ-γ angular correlation methods. Two predominant perturbed angular correlation signals, which were characterized by quadrupole interaction strengths of 83 and 91MHz and an asymmetry parameter of 0.08, were observed and were attributed to one or more In-VHg complexes. The complexes appeared after annealing doped samples at temperatures above 350C in vacuum, followed by quenching. The fraction of In atoms that was associated with vacancies was further increased by annealing at 80C for more than 10h. The In-vacancy complexes disappeared upon annealing in a Hg-saturated atmosphere.

W.C.Hughes, M.L.Swanson, J.C.Austin: Applied Physics Letters, 1991, 59[8], 938-40